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? semiconductor components industries, llc, 2001 march, 2001 rev. 3 1 publication order number: mgp19n35cl/d mgp19n35cl, mgb19n35cl preferred device ignition igbt 19 amps, 350 volts nchannel to220 and d 2 pak this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and overvoltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. ? ideal for igbtoncoil or distributorless ignition system applications ? high pulsed current capability up to 50 a ? gateemitter esd protection ? temperature compensated gatecollector voltage clamp limits stress applied to load ? integrated esd diode protection ? low threshold voltage to interface power loads to logic or microprocessor devices ? low saturation voltage ? optional gate resistor (r g ) maximum ratings (55 c t j 175 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces 380 v dc collectorgate voltage v cer 380 v dc gateemitter voltage v ge 22 v dc collector current continuous @ t c = 25 c pulsed i c 19 50 a dc a ac esd (human body model) r = 1500 w , c = 100 pf esd 8.0 kv esd (machine model) r = 0 w , c = 200 pf esd 800 v total power dissipation @ t c = 25 c derate above 25 c p d 165 1.1 watts w/ c operating and storage temperature range t j , t stg 55 to 175 c unclamped collectortoemitter avalanche characteristics (55 c t j 175 c) characteristic symbol value unit single pulse collectortoemitter avalanche energy v cc = 50 v, v ge = 5.0 v, pk i l = 22.4 a, l = 2.0 mh, starting t j = 25 c v cc = 50 v, v ge = 5.0 v, pk i l = 17.4 a, l = 2.0 mh, starting t j = 150 c e as 500 300 mj reverse avalanche energy v cc = 100 v, v ge = 20 v, l = 3.0 mh, pk i l = 25.8 a, starting t j = 25 c e as(r) 1000 mj 1 gate 3 emitter 4 collector 2 collector 1 gate 3 emitter 4 collector 2 collector to220ab case 221a style 9 1 2 3 4 marking diagrams & pin assignments g19n35cl = device code y = year ww = work week g19n35cl yww g19n35cl yww 1 2 3 4 d 2 pak case 418b style 4 device package shipping ordering information mgp19n35cl to220 50 units/rail mgb19n35clt4 d2pak 800 tape & reel c e g 19 amperes 350 volts (clamped) v ce(on) @ 10 a = 1.8 v max http://onsemi.com nchannel preferred devices are recommended choices for future use and best overall value. r ge
mgp19n35cl, mgb19n35cl http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance, junction to case r q jc 0.9 c/w thermal resistance, junction to ambient to220 r q ja 62.5 d 2 pak (note 1.) r q ja 50 maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 275 c electrical characteristics characteristic symbol test conditions temperature min typ max unit off characteristics collectoremitter clamp voltage bv ces i c = 2.0 ma t j = 40 c to 150 c 320 350 380 v dc i c = 10 ma t j = 40 c to 150 c 330 360 380 zero gate voltage collector current i ces v 300 v t j = 25 c 1.5 20 m a dc g ces v ce = 300 v, v ge = 0 v t j = 150 c 15 40* m dc v ge = 0 v t j = 40 c 0.7 1.5 reverse collectoremitter leakage current i ecs v24v t j = 25 c 0.35 1.0 ma g ecs v ce = 24 v t j = 150 c 10 20* t j = 40 c 0.05 0.5 reverse collectoremitter clamp voltage b vces(r) i75a t j = 25 c 25 33 50 v dc g vces(r) i c = 75 ma t j = 150 c 25 36 50 dc t j = 40 c 25 30 50 gateemitter clamp voltage bv ges i g = 5.0 ma t j = 40 c to 150 c 17 20 22 v dc gateemitter leakage current i ges v ge = 10 v t j = 40 c to 150 c 384 500 1000 m a dc gate resistor (optional) r g t j = 40 c to 150 c 70 w gate emitter resistor r ge t j = 40 c to 150 c 10 20 26 k w on characteristics (note 2.) gate threshold voltage v ge(th) i10a t j = 25 c 1.4 1.7 2.0 v dc g ge(th) i c = 1.0 ma, v ge = v ce t j = 150 c 0.75 1.1 1.4 dc v ge = v ce t j = 40 c 1.6 1.9 2.1* threshold temperature coefficient (negative) 4.4 mv/ c 1. when surface mounted to an fr4 board using the minimum recommended pad size. 2. pulse test: pulse width 300 m s, duty cycle 2%. *maximum value of characteristic across temperature range.
mgp19n35cl, mgb19n35cl http://onsemi.com 3 electrical characteristics (continued) characteristic symbol test conditions temperature min typ max unit on characteristics (continued) (note 3.) collectortoemitter onvoltage v ce(on) i 60a t j = 25 c 1.0 1.25 1.6 v dc g ce(on) i c = 6.0 a, v ge = 4. 0 v t j = 150 c 0.8 1.05 1.4 dc v ge = 4 . 0 v t j = 40 c 1.15 1.4 1.75* i10a t j = 25 c 1.2 1.5 1.8 i c = 10 a, v ge = 4. 0 v t j = 150 c 1.0 1.3 1.6 v ge = 4 . 0 v t j = 40 c 1.3 1.6 1.9* i15a t j = 25 c 1.5 1.75 2.1 i c = 15 a, v ge = 4. 0 v t j = 150 c 1.35 1.65 1.95 v ge = 4 . 0 v t j = 40 c 1.5 1.8 2.1* i20a t j = 25 c 1.7 2.0 2.3 i c = 20 a, v ge = 4. 0 v t j = 150 c 1.6 1.9 2.2 v ge = 4 . 0 v t j = 40 c 1.7 2.0 2.3* i25a t j = 25 c 2.0 2.25 2.6 i c = 25 a, v ge = 4. 0 v t j = 150 c 2.0 2.3 2.7* v ge = 4 . 0 v t j = 40 c 2.0 2.2 2.6 collectortoemitter onvoltage v ce(on) i c = 10 a, v ge = 4.5 v t j = 150 c 1.3 1.8 v dc forward transconductance gfs v ce = 5.0 v, i c = 6.0 a t j = 40 c to 150 c 8.0 15 25 mhos dynamic characteristics input capacitance c iss v25vv0v t40 c 1500 1800 pf output capacitance c oss v cc = 25 v, v ge = 0 v f = 1. 0 mhz t j = 40 c to 1 50 c 130 160 transfer capacitance c rss f = 1 . 0 mhz 150 c 6.0 8.0 switching characteristics (note 3.) turnoff delay time (inductive) t d(off) v cc = 300 v, i c = 10 a r 10k w l 300 h t j = 25 c 5.0 10 m sec y( ) d(off) cc , c r g = 1.0 k w , l = 300 m h t j = 150 c 6.0 10 m fall time (inductive) t f v cc = 300 v, i c = 10 a r 10k w l 300 h t j = 25 c 6.0 10 () f cc , c r g = 1.0 k w , l = 300 m h t j = 150 c 11 15* turnoff delay time (resistive) t d(off) v cc = 300 v, i c = 6.5 a r 10k w r46 w t j = 25 c 6.0 10 m sec y( ) d(off) cc , c r g = 1.0 k w , r l = 46 w t j = 150 c 7.0 10 m fall time (resistive) t f v cc = 300 v, i c = 6.5 a r 10k w r46 w t j = 25 c 12 20 () f cc , c r g = 1.0 k w , r l = 46 w t j = 150 c 18 22* turnon delay time t d(on) v cc = 10 v, i c = 6.5 a r 10k w r15 w t j = 25 c 1.5 2.0 m sec y d(on) cc , c r g = 1.0 k w , r l = 1.5 w t j = 150 c 1.5 2.0 m rise time t r v cc = 10 v, i c = 6.5 a r 10k w r15 w t j = 25 c 4.0 6.0 r cc , c r g = 1.0 k w , r l = 1.5 w t j = 150 c 5.0 6.0 3. pulse test: pulse width 300 m s, duty cycle 2%. *maximum value of characteristic across temperature range.
mgp19n35cl, mgb19n35cl http://onsemi.com 4 typical electrical characteristics (unless otherwise noted) 2.5 1.0 3.0 0.5 2.0 0.0 1.5 25 20 15 10 5 30 0 35 40 45 50 55 60 10000 1000 100 10 0 0 120 60 40 20 140 180 80 100 160 1 0 40 6 10 4 2 i c, collector current (amps) 0 60 20 30 50 8 1357 1.0 0.5 0.0 1.5 2.0 2.5 0 40 6 10 4 2 i c, collector current (amps) 0 v ce , collector to emitter voltage (volts) figure 1. output characteristics figure 2. output characteristics 02 1.5 1 0.5 2.5 3 3.5 figure 3. transfer characteristics v ge , gate to emitter voltage (volts) figure 4. collectortoemitter saturation voltage vs. junction temperature t j , junction temperature ( c) v ce , collector to emitter voltage (volts) i c, collector current (amps) figure 5. capacitance variation v ce , collector to emitter voltage (volts) figure 6. threshold voltage vs. temperature temperature ( c) c, capacitance (pf) threshold voltage (volts) 60 50 50 75 25 0 100 25 125 v ge = 10.0 v v ce , collector to emitter voltage (volts) 20 30 50 8 1357 v ge = 5.0 v v ge = 4.5 v v ge = 4.0 v v ge = 3.5 v v ge = 3.0 v v ge = 2.5 v t j = 25 c t j = 150 c v ge = 10.0 v v ge = 5.0 v v ge = 4.5 v v ge = 4.0 v v ge = 3.5 v v ge = 3.0 v v ge = 2.5 v v ce = 10 v t j = 25 c t j = 150 c t j = 40 c 4 4.5 5 150 v ge = 5.0 v i c = 25 a i c = 20 a i c = 15 a i c = 10 a i c = 5 a 50 50 75 25 0 100 25 125 150 mean + 4 s mean 4 s mean i c = 1 ma c rss c iss c oss
mgp19n35cl, mgb19n35cl http://onsemi.com 5 20 10 25 5 15 0 30 temperature ( c) i l , latch current (amps) l = 2.0 mh 50 50 75 25 0 100 25 125 150 175 v cc = 50 v v ge = 5.0 v r g = 1000 w l = 3.0 mh l = 6.0 mh 0 20 6 4 2 i l , latch current (amps) 0 30 inductor (mh) 5 10 15 25 810 t = 25 c t = 150 c v cc = 50 v v ge = 5.0 v r g = 1000 w 10 switching time ( m s) 0 i c , collector current (amps) figure 7. switching speed vs. case temperature figure 8. switching speed vs. collector current switching time ( m s) figure 9. minimum open secondary latch current vs. inductor figure 10. minimum open secondary latch current vs. temperature figure 11. typical open secondary latch vs. inductor inductor (mh) figure 12. typical open secondary latch vs. temperature temperature ( c) i l , latch current (amps) i l , latch current (amps) 14 t c , case temperature ( c) 4 6 8 12 068 410 2121416 045 3 26 1910 2 50 50 75 25 0 100 25 125 150 v cc = 300 v v ge = 5.0 v r g = 1000 w i c = 10 a l = 300 m h 10 0 14 4 6 8 12 2 20 0 30 5 10 15 25 78 t = 25 c t = 150 c v cc = 50 v v ge = 5.0 v r g = 1000 w l = 2.0 mh v cc = 50 v v ge = 5.0 v r g = 1000 w l = 3.0 mh l = 6.0 mh 50 50 75 25 0 100 25 125 150 175 20 0 30 5 10 15 25 t d(off) t f t d(off) t f v cc = 300 v v ge = 5.0 v r g = 1000 w t j = 150 c l = 300 m h
mgp19n35cl, mgb19n35cl http://onsemi.com 6 1.5 4 4 4 0.125 0.2 0.00001 0.001 0.0001 0.1 10 1 0.01 0.01 t,time (s) r(t), transient thermal resistance ( c/watt) single pulse 110 0.1 0.05 0.02 0.01 100 1000 duty cycle = 0.5 0.1 figure 13. transient thermal resistance (nonnormalized junctiontoambient mounted on fixture in figure 14) figure 14. test fixture for transient thermal curve (48 square inches of 1/8 thick aluminum) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) t a = p (pk) r q ja (t) r q jc @ r(t) for t 0.2 s
mgp19n35cl, mgb19n35cl http://onsemi.com 7 100 10 0.1 1 0.01 collectoremitter voltage (volts) collectoremitter voltage (volts) collector current (amps) collector current (amps) 1 100 10 1000 100 10 0.1 1 0.01 1 100 10 1000 dc t 1 = 1 ms d = 0.05 dc p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 t 1 = 2 ms d = 0.10 t 1 = 3 ms d = 0.30 100 10 0.1 1 0.01 figure 15. single pulse safe operating area (mounted on an infinite heatsink at t c = 25 c) collectoremitter voltage (volts) figure 16. single pulse safe operating area (mounted on an infinite heatsink at t c = 125 c) collectoremitter voltage (volts) collector current (amps) collector current (amps) 1 100 10 1000 100 10 0.1 1 0.01 1 100 10 1000 100 m s 1 ms 10 ms 100 ms dc 100 m s 1 ms 10 ms 100 ms dc figure 17. pulse train safe operating area (mounted on an infinite heatsink at t c = 25 c) figure 18. pulse train safe operating area (mounted on an infinite heatsink at t c = 125 c) t 1 = 1 ms d = 0.05 t 1 = 2 ms d = 0.10 t 1 = 3 ms d = 0.30
mgp19n35cl, mgb19n35cl http://onsemi.com 8 package dimensions style 9: pin 1. gate 2. collector 3. emitter 4. collector to220 threelead to220ab case 221a09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
mgp19n35cl, mgb19n35cl http://onsemi.com 9 package dimensions style 4: pin 1. gate 2. collector 3. emitter 4. collector d 2 pak case 418b03 issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
mgp19n35cl, mgb19n35cl http://onsemi.com 10 notes
mgp19n35cl, mgb19n35cl http://onsemi.com 11 notes
mgp19n35cl, mgb19n35cl http://onsemi.com 12 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mgp19n35cl/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

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